FDS5692Z Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench MOSFET 50V, 5.8A, 24m Ohm

February 2006
FDS5692Z
N-Channel UltraFET Trench^® MOSFET
50V, 5.8A, 24mΩ
General Description
Features
This N-Channel UltraFET device has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low r_DS(on) and fast switching speed.
„ Max r_DS(on) = 24mΩ at V_GS = 10V, I_D = 5.8A
„ Max r_DS(on) = 33mΩ at V_GS = 4.5V, I_D = 5.6A
„ ESD protection diode (note 3)
Applications
„ Low Qgd
„ DC/DC converter
„ Fast switching speed
D
D
D
5
D
6
7
G
SS
8
SO-8 S
MOSFET Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DS
V_GS
I_D
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
E_AS
Single Pulse Avalanche Energy
P_D
UltraFET Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FDS5692Z
FDS5692Z
SO-8
13”
©2006 Fairchild Semiconductor Corporation
FDS5692Z Rev C(W)
4
3
2
1
Ratings
50
± 20
5.8
40
72
2.5
1.2
1.1
–55 to 150
50
125
25
Units
V
V
A
mJ
W
°C
°C/W
Tape width
12mm
Quantity
2500units
www.fairchildsemi.com