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| FDPF15N65YDTU Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – N-Channel UniFETTM MOSFET 650 V, 15 A, 440 m | |||
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Package Marking and Ordering Information
Device Marking
FDPF15N65
Device
FDPF15N65
Package
TO-220F
Reel Size
--
Tape Width
--
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
ïBVDSS
/ ïTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250ïA, TJ = 25ï°C
ID = 250ïA, Referenced to 25ï°C
VDS = 650V, VGS = 0V
VDS = 520V, TC = 125ï°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250ïA
VGS = 10V, ID = 7.5A
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 7.5A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 325V, ID = 15A
RG = 21.7ï
VDS = 520V, ID = 15A
VGS = 10V
(Note 4)
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 15A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 15A
dIF/dt =100A/ïs
Min
650
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
0.65
--
--
--
--
--
0.36
19.2
2380
295
23.6
65
125
105
65
48.5
14.0
21.2
--
--
--
496
5.69
Max Unit
--
--
1
10
100
-100
V
V/ï°C
ïA
ïA
nA
nA
5.0
V
0.44
ï
--
S
3095 pF
385 pF
35.5 pF
140
ns
260
ns
220
ns
140
ns
63.0 nC
--
nC
--
nC
15
A
60
A
1.4
V
--
ns
--
ïC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.23mH, IAS = 15A, VDD = 50V, RG = 25ï, Starting TJ = 25ï°C
3. ISD ï£ 15A, di/dt ï£ 200A/ïs, VDD ï£ BVDSS, Starting TJ = 25ï°C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2006 Fairchild Semiconductor Corporation
2
FDPF15N65 Rev. C0
www.fairchildsemi.com
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