FDPF15N65YDTU Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel UniFETTM MOSFET 650 V, 15 A, 440 m

FDPF15N65
N-Channel UniFET^TM MOSFET
650 V, 15 A, 440 m
Features
• R_DS(on) = 440 m (Max.) @ V_GS = 10 V, I_D = 7.5 A
• Low Gate Charge (Typ. 48.5 nC)
• Low C_rss (Typ. 23.6 pF)
• 100% Avalanche Tested
Applications
• LCD/LED/PDP TV and Monitor
• Uninterruptible Power Supply
March 2013
Description
UniFET^TM MOSFET is Fairchild Semiconductor^®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
GDS
TO-220F
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25C)
- Continuous (T_C = 100C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(T_C = 25C)
- Derate above 25C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction termperature.

Thermal Characteristics
Symbol
R_JC
R_JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2006 Fairchild Semiconductor Corporation
1
FDPF15N65 Rev. C0
S
FDPF15N65
650
15*
9.5*
60*
 30
637
15
25.0
4.5
38.5
0.3
-55 to +150
300
FDPF15N65
3.3
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/C
C
C
Unit
C/W
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