FDP6030BL Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – N-Channel Logic Level PowerTrench MOSFET

Electrical Characteristics
Symbol
Parameter
T_C = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 15 V, ID = 40 A
IAR
Maximum Drain-Source Avalnche Current
150
mJ
40
A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 250 µA
30
∆_BVDSS
Breakdown Voltage Temperature I_D = 250 µA, Referenced to 25°C
23
∆_TJ
Coefficient
IDSS
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V
V
mV/^°C
1
µ_A
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -20 V, VDS = 0 V
-100
nA
On Characteristics (Note 1)
VGS(th)
Gate Threshold Voltage
∆_VGS(th)
∆_TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 250 ^µA
1
1.6
ID = 250 ^µA, Referenced to 25^°C
-4.5
3
V
mV/^°C
VGS = 10 V, ID = 20 A,
VGS = 10 V, ID = 20 A, TJ = 125^°C
0.015 0.018
Ω
0.021 0.030
VGS = 4.5 V,ID = 17 A
0.019 0.024
VGS = 10 V, VDS = 10 V
40
A
VDS = 5 V, ID = 20 A
30
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
1160
pF
250
pF
100
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 1)
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 ^Ω
VDS = 15 V,
ID = 20 A, VGS = 5 V
9
17
ns
11
20
ns
23
37
ns
8
16
ns
12
17
nC
3.2
nC
3.7
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current (Note 1)
VSD
Drain-Source Diode Forward
VGS = 0 V, IS = 20 A
(Note 1)
Voltage
Note:
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
40
A
0.95 1.2
V
FDP6030BL/FDB6030BL Rev.C