FDP6030BL Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel Logic Level PowerTrench MOSFET

July 2000
FDP6030BL/FDB6030BL
N-Channel Logic Level PowerTrench^ MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R_DS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
Features
• 40 A, 30 V. R_DS(ON) = 0.018 Ω @ V_GS = 10 V
R_DS(ON) = 0.024 Ω @ V_GS = 4.5 V.
• Critical DC electrical parameters specified at elevated
temperature.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• High performance trench technology for
extremely low R_DS(ON).
• 175°C maximum junction temperature rating.
D
D
G
D
S
TO-220
FDP Series
G
S
G
TO-263AB
FDB Series
S
Absolute Maximum Ratings ^TC ^{= 25°C unless otherwise noted}
Symbol
Parameter
FDP6030BL FDB6030BL
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Maximum Drain Current - Continuous
(Note 1)
- Pulsed
PD
Total Power Dissipation @ TC = 25^°C
Derate above 25^°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
30
±₂₀
40
120
60
0.36
-65 to +175
2.5
62.5
Units
V
V
A
W
W/^°C
°_C
°_C/W
°_C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB6030BL
FDB6030BL
13’’
FDP6030BL
FDP6030BL
Tube
Tape Width
24mm
N/A
Quantity
800
45
200 Fairchild Semiconductor International
FDP6030BL/FDB6030BL Rev.C