FDMS3615S Datasheet, PDF (2/16 Pages) Fairchild Semiconductor – 25V Asymmetric Dual N-Channel MOSFET

Electrical Characteristics T_J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BV_DSS
ΔBV_DSS
ΔT_J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I_D = 250 μA, V_GS = 0 V
I_D = 1 mA, V_GS = 0 V
I_D = 250 μA, referenced to 25°C
I_D = 10 mA, referenced to 25°C
I_DSS
Zero Gate Voltage Drain Current
V_DS = 20 V, V_GS = 0 V
I_GSS
Gate to Source Leakage Current
V_GS = 20 V, V_DS = 0 V
Type Min Typ Max Units
Q1 25
Q2 25
V
Q1
Q2
18
16
mV/°C
Q1
Q2
1
500
μA
Q1
100 nA
Q2
100 nA
On Characteristics
V_GS(th)
Gate to Source Threshold Voltage
V_GS = V_DS, I_D = 250 μA
V_GS = V_DS, I_D = 1 mA
Q1 1.2 1.7 2.5
Q2 1.2 1.8 2.5
V
ΔV_GS(th) Gate to Source Threshold Voltage
I_D = 250 μA, referenced to 25°C
Q1
ΔT_J
Temperature Coefficient
I_D = 10 mA, referenced to 25°C
Q2
-5
-6
mV/°C
r_DS(on)
V_GS = 10 V, I_D = 16 A
V_GS = 4.5 V, I_D = 13 A
Q1
Static Drain to Source On Resistance ^{VGS = 10 V, ID = 16 A, TJ = 125°C}
V_GS = 10 V, I_D = 18 A
V_GS = 4.5 V, I_D = 15 A
Q2
V_GS = 10 V, I_D = 18 A, T_J = 125°C
4.8 5.8
6.9 8.3
6.6 7.9
mΩ
2.5 3.4
3.6 4.6
3.4 4.1
g_FS
Forward Transconductance
V_DD = 5 V, I_D = 16 A
V_DD = 5 V, I_D = 18 A
Q1
63
Q2
84
S
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate Resistance
Q1:
V_DS = 13 V, V_GS = 0 V, f = 1 MHZ
Q2:
V_DS = 13 V, V_GS = 0 V, f = 1 MHZ
Q1
Q2
1326 1765
2175 2895
pF
Q1
Q2
342 455
574 765
pF
Q1
Q2
78 115
118 180
pF
Q1 0.2 0.9 2.9
Q2 0.2 1.0 3.2
Ω
Switching Characteristics
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
Q_g(TOT)
Total Gate Charge
Q_g(TOT)
Total Gate Charge
Q_gs
Gate to Source Charge
Q_gd
Gate to Drain “Miller” Charge
Q1
Q1
Q2
V_DD = 13 V, I_D = 16 A, R_GEN = 6 Ω _Q1
Q2
Q2
Q1
V_DD = 13 V, I_D = 18 A, R_GEN = 6 Ω
Q2
Q1
Q2
V_GS = 0V to 10 V _Q1
Q1
Q2
V_DD = 13 V,
V_GS = 0V to 4.5 V ^I_D ^{= 16 A}
Q1
Q2
Q1
Q2
Q2
V_DD = 13 V,
I_D = 18 A
Q1
Q2
7.7
9.5
15
19
ns
1.7
3
10
10
ns
19
24
34
49
ns
1.4
2.2
10
10
ns
19
31
27
43
nC
9
14
13
20
nC
3.6
5.7
nC
2.4
3.7
nC
©2011 Fairchild Semiconductor Corporation
2
FDMS3615S Rev.C6
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