FDMS3615S Datasheet, PDF (1/16 Pages) Fairchild Semiconductor – 25V Asymmetric Dual N-Channel MOSFET

FDMS3615S
PowerTrench^® Power Stage
25V Asymmetric Dual N-Channel MOSFET
August 2011
Features
General Description
Q1: N-Channel
„ Max r_DS(on) = 5.8 mΩ at V_GS = 10 V, I_D = 16 A
„ Max r_DS(on) = 8.3 mΩ at V_GS = 4.5 V, I_D = 13 A
Q2: N-Channel
„ Max r_DS(on) = 3.4 mΩ at V_GS = 10 V, I_D = 18 A
„ Max r_DS(on) = 4.6 mΩ at V_GS = 4.5 V, I_D = 15 A
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
„ RoHS Compliant
Pin 1
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook VCORE
„ Server
G1 _{D1 D1 D1}
D1
S2 ₅
Q2
4 ^D1
PHASE
(S1/D2)
G2S2
S2 _S2
Top
Power 56
Bottom
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
S2 6
S2 ₇
G2 ₈
PHASE
3 D1
2 ^D1
Q1
1 G1
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
T_A = 25°C
T_A = 25°C
Q1
Q2
25
25
±20
±20
23
18
89
16^1a
88
18^1b
45
38⁴
2.3^1a
1.0^1c
36
98⁵
2.3^1b
1.0^1d
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
55^1a
125^1c
55^1b
125^1d
°C/W
Device Marking
Y8OA
K10OC
Device
FDMS3615S
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMS3615S Rev.C6
www.fairchildsemi.com