FDMS2572 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
W_DSS
Single Pulse Drain-Source
Avalanche Energy
V_DD = 75 V, I_D = 15 A, L=1mH
I_AR
Drain-Source Avalanche Current
112 mJ
15
A
Off Characteristics
BV_DSS
Drain–Source Breakdown Voltage
ΔBVDSS
ΔT_J
I_DSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I_GSS
Gate–Body Leakage
On Characteristics (Note 2)
V_GS(th)
Gate Threshold Voltage
ΔVGS(th)
ΔT_J
r_DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
g_FS
Forward Transconductance
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_G
Gate Resistance
t_d(on)
Turn–On Delay Time
t_r
Turn–On Rise Time
t_d(off)
Turn–Off Delay Time
t_f
Turn–Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate–Source Charge
Q_gd
Gate–Drain Charge
V_GS = 0 V,
I_D = 250 μA
150
I_D = 250 μA, Referenced to 25°C
V_DS = 120 V, V_GS = 0 V
V_GS = ±20 V, V_DS = 0 V
V_DS = V_GS,
I_D = 250 μA
2
I_D = 250 μA, Referenced to 25°C
V_GS = 10 V, I_D = 4.5 A
V_GS = 6 V,
I_D = 4.5 A
V_GS = 10 V, I_D = 4.5 A, T_J = 125°C
V_DS = 10 V, I_D =4.5 A
V_DS = 75 V,
f = 1.0 MHz
V _GS = 0 V,
f = 1.0 MHz
V_DD = 75 V,
V_GS = 10 V,
I_D = 1 A,
R_GEN = 6 Ω
V_DS = 75 V,
V_GS = 10 V
I_D = 4.5 A,
V
180
mV/°C
1
μA
±100 nA
3.0
4
V
–9.8
mV/°C
36 47
39
53
mΩ
69 103
14
S
1960
pF
130
pF
30
pF
1.3
Ω
11
20
ns
8
16
ns
38
61
ns
31
50
ns
31
43
nC
9
nC
7
nC
Drain–Source Diode Characteristics
V_SD
Drain–Source Diode Forward
Voltage
V_GS = 0 V, I_S = 2.2 A (Note 2)
0.7 1.0
V
t_rr
Diode Reverse Recovery Time
I_F = 4.5 A,
Q_rr
Diode Reverse Recovery Charge ^{diF/dt = 100 A/µs}
67
nS
130
nC
Notes:
1.
R_θJA is determined with the device mounted on a 1in² pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R_θJC is guaranteed by design
while R_θCA is determined by the user's board design.
a) 44°C/W when
mounted on a 1in² pad
of 2 oz copper
b) 115 °C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
FDMS2572 Rev C(W)
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