FDMS2572 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench MOSFET

February 2006
FDMS2572
N-Channel UltraFET Trench^® MOSFET
150V, 4.5A, 47mΩ
General Description
UltraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for low r_DS(on), low ESR, low total and Miller
gate charge, these devices are ideal for high frequency
DC to DC converters.
Applications
„
Distributed Power Architectures and VRMs
„
Primary Switch for 24V and 48V Systems
„
High Voltage Synchronous Rectifier
Features
„ Max r_DS(on) = 47mΩ at V_GS = 10V, I_D = 4.5A
„ Typ Qg = 31nC at V_GS = 10 V
„ Low Miller Charge
„ Optimized efficiency at high frequencies
PIN 1
SSSG
D
MLP 5X6
DDDD
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current – Continuous
(Note 1a)
– Pulsed
P_D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDMS2572
FDMS2572
7’’
©2006 Fairchild Semiconductor Corporation
FDMS2572 Rev C(W)
1234
8765
Ratings
150
±20
4.5
30
2.8
1.1
–55 to +150
44
115
Units
V
V
A
W
°C
°C/W
Tape width
12mm
Quantity
3000 units
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