FDD86326 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m Ohm

Electrical Characteristics T_J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV_DSS
'BV_DSS
'T_J
I_DSS
I_GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I_D = 250 PA, V_GS = 0 V
80
I_D = 250 PA, referenced to 25 °C
V_DS = 64 V, V_GS = 0 V
V_GS = ±20 V, V_DS = 0 V
V
67
mV/°C
1
PA
±100 nA
On Characteristics (Note 2)
V_GS(th)
'V_GS(th)
'T_J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
r_DS(on)
Static Drain to Source On Resistance
g_FS
Forward Transconductance
V_GS = V_DS, I_D = 250 PA
2
I_D = 250 PA, referenced to 25 °C
V_GS = 10 V, I_D = 8 A
V_GS = 6 V, I_D = 4.6 A
V_GS = 10 V, I_D = 8 A, T_J = 125 °C
V_DS = 10 V, I_D = 8 A
3.1
4
V
-8.5
mV/°C
19
23
26
37
m:
33
44
21
S
Dynamic Characteristics
C_iss
C_oss
C_rss
R_g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V_DS = 50 V, V_GS = 0 V,
f = 1 MHz
780 1035 pF
180
240
pF
15
25
pF
0.4
:
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_g
Q_gs
Q_gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V_DD = 50 V, I_D = 8 A,
V_GS = 10 V, R_GEN = 6 :
V_GS = 0 V to 10 V
V_GS = 0 V to 5 V _{VDD = 50 V,}
I_D = 8 A
7.6
15
ns
3.0
10
ns
13.4
24
ns
2.9
10
ns
13.4
19
nC
7.6
11
nC
4.0
nC
3.7
nC
Drain-Source Diode Characteristics
V_SD
Source to Drain Diode Forward Voltage
V_GS = 0 V, I_S = 8 A
V_GS = 0 V, I_S = 2.6 A
(Note 2)
(Note 2)
0.8
1.3
V
0.7
1.2
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_F = 8 A, di/dt = 100 A/Ps
43
68
ns
43
68
nC
Notes:
1. R_TJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R_TJCis guaranteed by design while R_TJA is determined by the user’s board design.
a. 40 °C/W when mounted on a
1 in² pad of 2 oz copper.
b. 96 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. Starting T_J = 25°C, L = 3 mH, I_AS = 9 A, V_DD = 80 V, V_GS = 10 V.
©2010 Fairchild Semiconductor Corporation
2
FDD86326 Rev.C2
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