FDD86326 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m Ohm

May 2013
FDD86326
N-Channel Shielded Gate PowerTrench^® MOSFET
80 V, 37 A, 23 m:
Features
General Description
„ Shielded Gate MOSFET Technology
„ Max r_DS(on) = 23 m: at V_GS = 10 V, I_D = 8 A
„ Max r_DS(on) = 37 m: at V_GS = 6 V, I_D = 4.6 A
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Very low Qg and Qgd compared to competing trench
technologies
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench^® process that
incorporates Shielded Gate technology. This process has been
optimized for r_DS(on), switching performance and ruggedness.
Application
„ DC - DC Conversion
„ Fast switching speed
„ 100% UIL tested
„ RoHS Compliant
D
D
G
S
D_{T O}-P_-2A₅K₂
(T O -25 2)
G
S
MOSFET Maximum Ratings T_C = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
80
±20
37
8
40
121
62
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
R_TJC
R_TJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDD86326
Device
FDD86326
Package
D-PAK(TO-252)
2.0
(Note 1a)
40
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
1
FDD86326 Rev.C2
www.fairchildsemi.com