FDD8580 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 20V, 35A, 9mohm

Electrical Characteristics T_J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BV_DSS
ΔBV_DSS
ΔT_J
I_DSS
I_GSS
Drain to Source Breakdown Voltage I_D = 250μA, V_GS = 0V
20
Breakdown Voltage Temperature
Coefficient
I_D = 250μA, referenced to
25°C
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V_DS = 16V,
V_GS = 0V
V_GS = ±20V
T_J = 150°C
On Characteristics
V_GS(th)
Gate to Source Threshold Voltage
V_GS = V_DS, I_D = 250μA
1.2
ΔV_GS(th)
ΔT_J
Gate to Source Threshold Voltage
Temperature Coefficient
I_D = 250μA, referenced to
25°C
V_GS = 10V, I_D = 35A
r_DS(on)
Drain to Source On Resistance
V_GS = 4.5V, I_D = 33A
V_GS = 10V, I_D = 35A
T_J = 175°C
g_FS
Forward Transcondductance
V_DS = 5V,I_D = 35A
Dynamic Characteristics
C_iss
C_oss
C_rss
R_g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V_DS = 10V, V_GS = 0V,
f = 1MHz
f = 1MHz
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
Q_g(TOT)
Q_g(5)
Q_gs
Q_gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
V_DD = 10V, I_D = 35A
V_GS = 10V, R_GS = 27Ω
V_GS = 0V to 10V
V_GS = 0V to 5V
V_DD = 10V
I_D = 35A
I_g = 1.0mA
Drain-Source Diode Characteristics
V_SD
Source to Drain Diode Forward Voltage ^{VGS = 0V, IS = 35A}
V_GS = 0V, I_S = 15A
t_rr
Reverse Recovery Time
I_F = 35A, di/dt = 100A/μs
Q_rr
Reverse Recovery Charge
I_F = 35A, di/dt = 100A/μs
Notes:
1: Pulse time < 300μs, Duty cycle = 2%.
2: Starting T_J = 25^oC, L = 0.3mH, I_AS = 21A ,V_DD = 18V, V_GS = 10V.
Typ Max Units
V
17.3
mV/°C
1
μA
250
±100 nA
1.8
2.5
V
-6.3
mV/°C
6.6
9.0
9.3
13.0
mΩ
10.6 14.5
61
S
1085 1445 pF
340 450
pF
205 310
pF
1.3
Ω
7
14
ns
11
20
ns
59
94
ns
34
54
ns
19
27
nC
10
14
nC
3.5
nC
3.9
nC
0.95 1.25
V
0.85 1.2
26
39
ns
19
29
nC
FDD8580/FDU8580 Rev. A
2
www.fairchildsemi.com