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| FDD8580 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 20V, 35A, 9mohm | |||
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July 2006
FDD8580/FDU8580
tm
N-Channel PowerTrench® MOSFET
20V, 35A, 9mΩ
Features
General Description
 Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A
 Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A
 Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V
 Low gate resistance
 100% Avalanche tested
 RoHS compliant
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Application
 Vcore DC-DC for Desktop Computers and Servers
 VRM for Intermediate Bus Architecture
D
G DS
I-PAK
(TO-251AA)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS
Drain to Source Voltage
VGS
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
ID
-Continuous (Die Limited)
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Characteristics
(Note 1)
(Note 2)
RθJC
Thermal Resistance, Junction to Case TO-252,TO-251
RθJA
RθJA
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
Package Marking and Ordering Information
Device Marking
FDD8580
FDU8580
Device
FDD8580
FDU8580
Package
TO-252AA
TO-251AA
Reel Size
13ââ
N/A(Tube)
G
S
Ratings
20
±20
35
58
159
66
49.5
-55 to 175
Units
V
V
A
mJ
W
°C
3.03
°C/W
100
°C/W
52
°C/W
Tape Width
12mm
N/A
Quantity
2500 units
75 units
©2006 Fairchild Semiconductor Corporation
1
FDD8580/FDU8580 Rev. A
www.fairchildsemi.com
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