FDB8878 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – N-Channel Logic Level PowerTrench® MOSFET 30V, 48A, 14mOhm

Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
B_VDSS
∆BV_DSS
∆T_J
I_DSS
I_GSS
Drain to Source Breakdown Voltage
I_D = 250µA, V_GS = 0V
30
Breakdown Voltage Temp. Coefficient
I_D = 250µA,
Referenced to 25^oC
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V_DS = 24V
V_GS = 0V
V_GS = ±20V
-
T_A = 150^oC -
-
-
-
V
21
mV/^oC
-
1
µA
-
250
-
±100 nA
On Characteristics
V_GS(TH)
∆V_GS(TH)
∆T_J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
r_DS(ON)
Drain to Source On Resistance
V_GS = V_DS, I_D = 250µA
I_D = 250µA,
Referenced to 25^oC
I_D = 40A, V_GS = 10V
I_D = 36A, V_GS = 4.5V
I_D = 40, V_GS = 10V,
T_A = 175^oC
1.2
1.7
2.5
V
-5
mV/^oC
-
12
14
-
15
18
mΩ
-
19
21
Dynamic Characteristics
C_ISS
C_OSS
C_RSS
R_G
Q_g(TOT)
Q_g(5)
Q_gs
Q_gs2
Q_gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
-
V_DS = 15V, V_GS = 0V,
f = 1MHz
-
-
f = 1MHz
V_GS = 0V to 10V _{VDD = 15V}
-
V_GS = 0V to 5V I_D = 40A
-
I_g = 1.0mA
-
-
-
927 1235 pF
188 250 pF
117 175 pF
3.0
Ω
17.1 23
nC
9.2
12
nC
2.6
-
nC
1.7
-
nC
3.7
-
nC
Switching Characteristics (V_GS = 10V)
t_ON
Turn-On Time
t_d(ON)
Turn-On Delay Time
t_r
t_d(OFF)
Rise Time
Turn-Off Delay Time
t_f
Fall Time
t_OFF
Turn-Off Time
V_DD = 15V, I_D = 40A
V_GS = 10V, R_GS = 16Ω
-
255 383
ns
-
11.1
ns
-
244
ns
-
14.8
ns
-
35.3
ns
-
50
75
ns
Drain-Source Diode Characteristics
V_SD
Source to Drain Diode Voltage
t_rr
Reverse Recovery Time
Q_RR
Reverse Recovered Charge
I_SD = 40A
-
1.1 1.25
V
I_SD = 3.2A
-
0.85 1.2
V
I_SD = 40A, dI_SD/dt=100A/µs
-
14.4 18.8 ns
I_SD = 40A, dI_SD/dt=100A/µs
-
5.1
6.7
nC
Notes:
1: Starting T_J = 25°C, V_DD = 30V, V_GS = 10V
2: R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
3:
drain
R_θJA
ipsinmse. aRsu^θJre^Cdiswgituha1ra.0ntiene^{2dcobpypdeersoignnFwRh-4ilebRoaθJ}rd^A
is determined by the user’s board design.
4: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDB8878 Rev. A
2
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