FDB8878 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Logic Level PowerTrench® MOSFET 30V, 48A, 14mOhm

November 2005
FDB8878
N-Channel Logic Level PowerTrench^® MOSFET
30V, 48A, 14mΩ
General Descriptions
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(ON) and fast switching speed.
Features
„ r_DS(ON) = 14mΩ, V_GS = 10V, I_D = 40A
„ r_DS(ON) = 18mΩ, V_GS = 4.5V, I_D = 36A
„ High performance trench technology for extremely low
r_DS(ON)
„ Low gate charge
„ High power and current handling capability
„ RoHS Compliant
D
GATE
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
G
D
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V)
Continuous (T_C = 25^oC, V_GS = 4.5V)
Pulsed
(Note 4)
E_AS
P_D
T_J, T_STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Operating and Storage Temperature
L = 1mH, I_AS = 11A
L = 0.03mH,I_AS = 38A
Ratings
30
±20
48
42
170
60
21
47.3
-55 to 175
Units
V
V
A
A
A
mJ
W
o_C
Thermal Characteristics
R_θJC
R_θJA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
3.7
o_C/W
43
o_C/W
Package Marking and Ordering Information
Device Marking
FDB8878
Device
FDB8878
Package
TO-263
Reel Size
13”
Tape Width
24mm
Quantity
800 units
©2005 Fairchild Semiconductor Corporation
1
FDB8878 Rev. A
www.fairchildsemi.com