ES1F Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – FAST RECOVERY RECTIFIER

Typical Performance Characteristics
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1.2
1.0
RESISTIVE OR
0.8 INDUCTIVE LOAD
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
0.6
0.4
0.2
0
80
90
100
110
120
130
LEAD TEMPERATURE. (^oC)
FIG.3- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
10
10
Tj=25⁰C
PULSE WIDTH-300 S
1% DUTY CYCLE
T=25 ^oC
j
PULSE WIDTH 300uS
1% DUTY CYCLE
140
150
1
1
0.1
0.1
ES1F-1G
ES1H-1J
0.01
0.4
0.01
0.4
0.6
0.6
0.8
1.0
1.2
1.4
0.8
1.0 1.2
1.4
FORWARD VOLTAGE. (V)
1.6
1.6
1.8
1.8
FIG.5- TYPICAL JUNCTION CAPACITANCE
14
Tj=25⁰C
12
f=1.0MHz
Vsig=50mVp-p
10
ES1_{F - G}
8.0
ES1_{H - J}
6.0
4.0
2.0
0
0
1
10
100
REVERSE VOLTAGE. (V)
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
8.3ms Single Half Sine Wave
25
(JEDEC Method) at TL=120^oC
20
15
10
5.0
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
100
Tj=125⁰C
10
Tj=85⁰C
1
Tj=25⁰C
0.1
0.01
0
20
40
60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
2
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ES1F - ES1J Rev. A