ES1F Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – FAST RECOVERY RECTIFIER

ES1F - ES1J
Fast Rectifiers
Features
• For surface mount applications.
• Glass passivated junction.
• Low profile package.
• Easy pick and place.
• Built-in strain relief.
• Superfast recovery times for high efficiency.
July 2007
SMA(DO-214AC)
Color Band Denotes Cathode
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
ES1F ES1G ES1H
V_RRM
I_F(AV)
I_FSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave (JEDEC method)
300
400
500
1.0
30
T_J
T_STG
P_D
Junction Temperature
Storage Temperature Range
Power Dissipation
150
-55 to 150
1.47
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
ES1J
600
Thermal Characteristics
Symbol
Parameter
R_θJA
Thermal Resistance, Junction to Ambient *
R_θJL
Thermal Resistance, Junction to Lead *
* P. C. B mounted on 0.2’’ x 0.2’’( 5 x 5 mm) copper Pad Area.
Value
85
35
Electrical Characteristics T_C = 25°C unless otherwise noted
Symbol
Parameter
V_F
Maximum Forward Voltage @ I_F = 1.0 A
T_rr
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
I_R
Maximum Reverse Current @ rated VR TA = 25°C
TA = 100°C
C_j
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
Value
1.3
1.7
35
5.0
100
10.0
8.0
Units
V
A
A
°C
°C
W
Units
°C/W
°C/W
Units
V
ns
uA
pF
©2007 Fairchild Semiconductor Corporation
1
ES1F - ES1J Rev. A
www.fairchildsemi.com