BU806 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,150-200V,60W)

Typical Characteristics
1000
VCE = 5V
100
VCE = 1.5V
10
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
1
0.1
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 3. Damper Diode
80
70
60
50
40
30
20
10
0
0
50
100
150
200
TC[^oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
10
Ic = 100 IB
VBE(sat)
1
VCE(sat)
0.1
0.1
1
10
100
IC[A], COLLECTOR CURRENT
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
1000
100
IC MAX. (Pulse)
10
IC MAX. (DC)
1
1ms
10ms
10us
100us
0.1
BU806
BU807
0.01
0.01
0.1
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
Rev. A, February 2000