 English |
|
|
|
|
|
|
|
| BU806 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,150-200V,60W) | |||
| |||
|
BU806/807
High Voltage & Fast Switching Darlington
Transistor
⢠Using In Horizontal Output Stages of 110° Crt Video Displays
⢠BUILT-IN SPEED-UP Diode Between Base and Emitter
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BU806
: BU807
VCEO
Collector-Emitter Voltage
: BU806
: BU807
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO (sus)
* Collector-Emitter Sustaining Voltage
: BU806
: BU807
IC = 100mA, IB = 0
ICES
Collector Cut-off Current
: BU806
: BU807
ICEV
Collector Cut-off Current
: BU806
: BU807
IEBO
Emitter Cut-off Current
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
VF
* Damper Diode Forward Voltage
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
VCE = 400V, VBE = 0
VCE = 330V, VBE = 0
VCE = 400V, VBE = -6V
VCE = 330V, VBE = -6V
VBE = 6V, IC = 0
IC = 5A, IB = 50mA
IC = 5A, IB = 50mA
IF = 4A
Value
400
330
200
150
6
8
15
2
60
150
- 55 ~150
Units
V
V
V
V
V
A
A
A
W
°C
°C
Min. Max. Units
200
V
150
V
100
µA
100
µA
100
µA
100
µA
3
mA
1.5
V
2.4
V
2
V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese