BU508AF Datasheet, PDF (2/4 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Typical Characteristics
100
V = 5V
CE
10
1
0.1
0.01
0.1
1
10
I_C[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
10000
1000
I =2I
C
B
100
10
0.1
1
10
100
I_C[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
100
I_C Max. (Pulsed)
10
I_C Max. (Continuous)
1
1ms
DC
0.1
0.01
1
10
100
1000
V_CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
10000
1000
I =2I
C
B
100
10
0.1
1
10
100
I_C[A], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
1000
f = 1MHz
100
10
1
10
100
V_CB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
T_C[^oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. B, December 2002