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BU508AF Datasheet, PDF (1/4 Pages) NXP Semiconductors – Silicon Diffused Power Transistor
BU508AF
TV Horizontal Output Applications
1
TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
1500
700
5
5
15
60
150
- 65 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus) * Collector-Emitter Sustaining Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICES
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
* Pulse Test: PW = 300µs, duty cycle = 1.5% Pulsed
IC = 100mA, IB = 0
IE = 10mA, IC = 0
VCE = 1500V, VBE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 4.5A
IC = 4.5A, IB = 2A
IC = 4.5A, IB = 2A
Min.
700
5
2.25
Typ.
Max.
1
10
Units
V
V
mA
mA
1
V
1.5
V
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
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