BU406TU Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

Typical Performance Characteristics
5
4
IB
=
200mA
IB
=
180mA
IB =
1_I6_B⁰_=I^m_B1^A_{=401IBm20=Am1A00mA}
IB = ^80mA
3
IB = ^60mA
IB = ^40mA
2
IB = 20mA
1
0
0
1
2
3
4
5
6
7
8
9 10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10000
1000
VBE(sat)
IC = 10 IB
100
VCE(sat)
10
1
10
100
1000
10000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
IC Max. (Pulsed)
10
IC Max. (Continuous)
10ms
1
0.1
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
1000
100
VCE = 5V
10
1
1
10
100
1000
10000
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
1000
f = 1MHz
100
10
1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
80
70
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175 200
T_C[^oC], CASE TEMPERATURE
Figure 6. Power Derating
© 2012 Fairchild Semiconductor Corporation
BU406/406H/408 Rev. B0
2
www.fairchildsemi.com