BU406TU Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

BU406/406H/408
NPN Epitaxial Silicon Transistor
Features
• High Voltage Switching
• Use In Horizontal Deflection Output Stage
April 2012
1
TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_J
T_STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Value
400
200
6
7
10
4
60
150
- 55 to 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics T_C = 25°C unless otherwise noted
Symbol
I_CES
I_EBO
V_CE(sat)
V_BE(sat)
f_T
t_OFF
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
: BU406
: BU406H
: BU408
Base-Emitter Saturation Voltage
: BU406
: BU406H
: BU408
Current Gain Bandwidth Product
Turn Off Time
: BU406
: BU406H
: BU408
Test Condition
V_CE = 400V, V_BE = 0
V_CE = 250V, V_BE = 0
V_CE = 250V, V_BE = 0 @ T_C=150°C
V_BE = 6V, I_C = 0
I_C = 5A, I_B = 0.5A
I_C = 5A, I_B = 0.8A
I_C = 6A, I_B = 1.2A
I_C = 5A, I_B = 0.5A
I_C = 5A, I_B = 0.5A
I_C = 6A, I_B = 1.2A
V_CE = 10V, I_C = 0.5A
I_C = 5A, I_B = 0.5A
I_C = 5A, I_B = 0.8A
I_C = 6A, I_B = 1.2A
Min.
10
Max.
5
100
1
1
Units
mA
μA
mA
mA
1
V
1
V
1
V
1.2
V
1.2
V
1.5
V
MHz
0.75
μs
0.4
μs
0.4
μs
© 2012 Fairchild Semiconductor Corporation
BU406/406H/408 Rev. B0
1
www.fairchildsemi.com