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BSV52 Datasheet, PDF (2/7 Pages) NXP Semiconductors – NPN switching transistor
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NPN Switching Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
12
V
V(BR)CES
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
20
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100 µA, IC = 0
5.0
V
ICBO
Collector-Cutoff Current
VCB = 10 V, IE = 0
VCB = 10 V, IE = 0, TA = 125°C
100
nA
5.0
µA
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 10 mA, IB = 0.3 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
25
40
120
25
0.3
V
0.25
V
0.4
V
0.7
0.85
V
1.2
V
SMALL SIGNAL CHARACTERISTICS
fT
Transition Frequency
Ccb
Collector-Base Capacitance
Ceb
Emitter-Base Capacitance
IC = 10 mA, VCE = 10 V,
400
f = 100 MHz
MHz
IE = 0, VCB = 5.0 V, f = 1.0 MHz
4.0
pF
IC = 0, VEB = 1.0 V, f = 1.0 MHz
4.5
pF
3
SWITCHING CHARACTERISTICS
ts
Storage Time
ton
Turn-On Time
toff
Turn-Off Time
IB1 = IB2 = IC = 10 mA
VCC = 3.0 V, IC = 10 mA,
IB1 = 3.0 mA
VCC = 3.0 V, IC = 10 mA,
IB1 = 3.0 mA, IB2 = 1.5 mA
13
ns
12
ns
18
ns
Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
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