BSV52 Datasheet, PDF (1/7 Pages) NXP Semiconductors – NPN switching transistor

BSV52
C
SOT-23
Mark: B2
E
B
NPN Switching Transistor
This device is designed for high speed saturated switching at
collector currents of 10 mA to 100 mA. Sourced from Process 21.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
V_CES
V_EBO
I_C
T_J, T_stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
12
20
5.0
200
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
R_θJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Max
*BSV52
225
1.8
556
Units
V
V
V
mA
°C
Units
mW
mW /°C
°C/W
1997 Fairchild Semiconductor Corporation