BCP69 Datasheet, PDF (2/5 Pages) NXP Semiconductors – PNP medium power transistor

Typical Performance Characteristics
Typical Pulsed Current Gain
vs Collector Current
300
V_CE = 5.0V
250
200
125 °C
150
25 °C
100
- 40 °C
50
0
0.01
0.1
12
I _C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
1
β = 10
0.8
0.6
25 °C
0.4
- 40 °C
125 °C
0.2
0
0.01
0.1
1
3
I _C - COLLE CTOR CURRENT (A)
Base-Emitter Saturation
Voltage vs Collector Current
β = 10
1
0.8
0.6
0.4
1
- 40 °C
25 °C
125 °C
10
100
I _C - COLLECTOR CURRENT ( mA)
1000
Collector-Cutoff Current
vs Ambient Temperature
10 0
V_CB = 2 0V
10
1
0.1
25
50
75
10 0
125
150
T A - AM BIENT TE MPE RATURE (°C)
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
1
- 40 °C
25 °C
125 °C
V_CE = 5.0 V
10
100
I _C - COLLECTOR CURRENT (mA)
1000
Collector-Base Capacitance
vs Collector-Base Voltage
40
f = 1.0 MHz
30
20
10
0
0
10
20
30
V_CB- COLLECTOR-BASE VOLTAGE (V)
BCP69 Rev. B
2
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