BCP69 Datasheet, PDF (1/5 Pages) NXP Semiconductors – PNP medium power transistor

January 2007
BCP69
PNP General Purpose Amplifier
4
• This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 1.0A.
• Sourced from Process 77.
3
2
1 _SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_CEO
V_CBO
V_EBO
I_C
T_J
T_STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Junction Temperature
Storage Temperature Range
-20
V
-30
V
-5.0
V
-1.5
A
150
°C
- 55 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm²
Electrical Characteristics* T_a = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
BV_CEO
BV_CBO
BV_EBO
I_CBO
I_EBO
h_FE
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
V_CE(sat) Collector-Emitter Saturation Voltage
V_BE(on)
Base-Emitter On Voltage
C_cb
Collector-Base Capacitance
h_fe
Small-Signal Current Gain
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
I_C = -10mA, I_B = 0
I_C = -1.0mA, I_E = 0
I_E = -100µA, I_C = 0
V_CB = -25V, I_E = 0
V_CB = -25V, I_E = 0, T_j = 150^oC
V_EB = -5.0V, I_C = 0
I_C = -5mA, V_CE = -1.0V
I_C = -500mA, V_CE = -1.0V
I_C = -1.0A, V_CE = -1.0V
I_C = -1.0A, I_B = -100mA
I_C = -1.0A, V_CE = -1.0V
V_CB = -10V, I_E = 0, f = 1.0MHz
I_C = -50mA, V_CE = -10V, f = 20MHz
Value
1.0
8.0
125
Min.
-20
-30
-5.0
50
85
60
2.5
Typ.
Units
W
mW/°C
°C/W
Max.
-100
-10
-100
Units
V
V
V
nA
uA
nA
375
-0.5
V
-1.0
V
30
pF
©2007 Fairchild Semiconductor Corporation
1
BCP69 Rev. B
www.fairchildsemi.com