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BCP56 Datasheet, PDF (2/6 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
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NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
OFF CHARACTERISTICS
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 10 mA
IC = 100 µA
IE = 10 µA
VCB = 30 V
VCB = 30 V, Tj= +125°C
VEB = 5V
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
IC = 5 mA, VCE = 2V
IC = 150 mA, VCE = 2V
IC = 500mA, VCE = 2 V
IC = 500 m A, IB = 50 mA
IC = 500 m A, VCE = 2 V
Min Max Units
80
V
100
V
5
V
100 nA
10
uA
10
µA
25
-
40 250
25
0.5
V
1
V
Pr3947_REV A
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