BCP56 Datasheet, PDF (1/6 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

BCP56
C
E
C
B
SOT-223
NPN General Purpose Amplifier
These devices are designed for general purpose medium power amplifiers and switches requiring collector
currents to 1A. Sourced from Process 39.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
BCP56
V_CEO
Collector-Emitter Voltage
80
V_CBO
Collector-Base Voltage
100
V_EBO
Emitter-Base Voltage
5
I_C
T_J, T_stg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.2
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
P_D
Total Device Dissipation
Derate above 25°C
BCP56
1
8
R_θJA
Thermal Resistance, Junction to Ambient
125
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².
Units
W
mW/°C
°C/W
©1998 Fairchild Semiconductor Corporation
Pr3947_REV A