BCP53 Datasheet, PDF (2/6 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
Collector-Emitter Breakdown
I_C = 10 mA, I_B = 0
80
V
Voltage
V(BR)CBO
Collector-Base Breakdown Voltage I_C = 100 µA, I_E = 0
100
V
V(BR)EBO
Emitter-Base Breakdown Voltage
I_E = 10 µA, I_C = 0
5.0
V
ICBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 125°C
VEB = 5.0 V, IC = 0
100
nA
10
µA
10
µA
ON CHARACTERISTICS
h_FE
DC Current Gain
V_CE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I_C = 5.0 mA, V_CE = 2.0 V
IC = 150 mA, VCE = 2.0 V
IC = 500 mA, VCE = 2.0 V
IC = 500 mA, IB = 50 mA
IC = 500 mA, VCE = 2.0 V
25
40
250
25
0.5
V
1.0
V