BCP53 Datasheet, PDF (1/6 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

BCP53
C
SOT-223
E
C
B
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.0 A. Sourced from Process 78. See BCP52 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
80
VCBO
Collector-Base Voltage
100
VEBO
Emitter-Base Voltage
5.0
IC
Collector Current - Continuous
1.2
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JA
Thermal Resistance, Junction to Ambient
Max
BCP53
1.5
12
83.3
Units
V
V
V
A
°C
Units
W
mW/°C
°C/W
© 1997 Fairchild Semiconductor Corporation