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BCP52_00 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier
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PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
60
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100 µA, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
V
ICBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 125°C
VEB = 5.0 V, IC = 0
100
nA
10
µA
10
µA
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 5.0 mA, VCE = 2.0 V
IC = 150 mA, VCE = 2.0 V
IC = 500 mA, VCE = 2.0 V
IC = 500 mA, IB = 50 mA
IC = 500 mA, VCE = 2.0 V
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
25
40
250
25
0.5
V
1.0
V
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
4 00
V CE = 5V
3 00
125 °C
2 00
25 °C
1 00
- 40 °C
0
0 .01
0.1
1
I C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
0.6
β = 10
0.5
- 40 °C
0.4
25 °C
0.3
0.2
125 °C
0.1
0
0.01
0.1
I C - COLLE CTOR CURRENT (A)
1 1.5
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