BCP52_00 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

BCP52
C
SOT-223
E
C
B
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.0 A. Sourced from Process 78.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_CEO
V_CBO
Collector-Emitter Voltage
Collector-Base Voltage
60
60
V
V
3
V_EBO
Emitter-Base Voltage
5.0
V
I_C
Collector Current - Continuous
1.2
A
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
R_θJA
Thermal Resistance, Junction to Ambient
Max
BCP52
1.5
12
83.3
Units
W
mW /°C
°C/W
1997 Fairchild Semiconductor Corporation