BCP52 Datasheet, PDF (2/4 Pages) STMicroelectronics – MEDIUM POWER AMPLIFIER

PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
Collector-Emitter Breakdown Voltage I_C = 10 mA, I_B = 0
60
V
V(BR)CBO
Collector-Base Breakdown Voltage
I_C = 100 µA, I_E = 0
60
V
V_(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
V
I_CBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
V_CB = 30 V, I_E = 0
VCB = 30 V, IE = 0, TA = 125°C
VEB = 5.0 V, IC = 0
100
nA
10
µA
10
µA
ON CHARACTERISTICS
h_FE
DC Current Gain
V_CE(sat)
V_BE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I_C = 5.0 mA, V_CE = 2.0 V
I_C = 150 mA, V_CE = 2.0 V
IC = 500 mA, VCE = 2.0 V
IC = 500 mA, IB = 50 mA
I_C = 500 mA, V_CE = 2.0 V
25
40
250
25
0.5
V
1.0
V
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
400
V CE = 5V
300
125 °C
200
25 °C
100
- 40 ºC
0
0.01
0.1
1
I _C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
0.6
β = 10
0.5
- 40 ºC
0.4
25 °C
0.3
0.2
125 ºC
0.1
0
0.01
0.1
I _C - COLLECTOR CURRENT (A)
P8
1 1.5