BCP52 Datasheet, PDF (1/4 Pages) STMicroelectronics – MEDIUM POWER AMPLIFIER

Discrete POWER & Signal
Technologies
BCP52
C
SOT-223
E
C
B
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.0 A. Sourced from Process 78.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
60
V_CBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
5.0
I_C
Collector Current - Continuous
1.2
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JA
Thermal Resistance, Junction to Ambient
Max
BCP52
1.5
12
83.3
Units
V
V
V
A
°C
Units
W
mW/°C
°C/W
©1997 Fairchild Semiconductor Corporation