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BC369 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP medium power transistor
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PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
20
V
V(BR)CES
Collector-Base Breakdown Voltage
IC = 100 µA, IE = 0
25
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
V
ICBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0, TA = 150°C
VEB = 5.0 V, IC = 0
10
µA
1.0
mA
10
µA
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 5.0 mA, VCE = 10 V
IC = 0.5 A, VCE = 1.0 V
IC = 1.0 A, VCE = 1.0 V
IC = 1.0 A, IB = 100 mA
IC = 1.0 A, VCE = 1.0 V
50
85
375
60
0.5
V
1.0
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 5.0 V,
45
f = 35 MHz
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
MHz
3
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
300
VCE = 5.0V
250
200
125 °C
150
25 °C
100
- 40 °C
50
0
0.01
0.1
12
I C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
1
β = 10
0.8
0.6
25 °C
0.4
- 40 °C
125 °C
0.2
0
0.01
0.1
1
3
I C - COLLE CTOR CURRENT (A)
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