BC369 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP medium power transistor

BC369
B
CE
TO-92
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2 A.
Sourced from Process 77.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
V_CES
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current - Continuous
T_J, T_stg
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
20
25
5.0
1.5
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
Thermal Resistance, Junction to Case
R_θJA
Thermal Resistance, Junction to Ambient
Max
BC369
625
5.0
83.3
200
Units
V
V
V
A
°C
Units
mW
mW /°C
°C/W
°C/W
1997 Fairchild Semiconductor Corporation