BC327A Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

Typical Performance Characteristics
Figure 1. Static Characterstic
-500
-400
-300
IB_I=BI=B^-I=_B^5-I.=_B4-0I=.m4-B5.=3-mIA0_{B.3m5-A=.m20A-m.A52Am.0AmA}
IB ^{= - 1.5mA}
-200
IB = - 1.0mA
P_{T = 600mW}
IB = - 0.5mA
-100
IB = 0
-0
-1
-2
-3
-4
-5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. DC Current Gain
1000
100
10
PULSE
VCE = - 2.0V
- 1.0V
1
-0.1
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 5. Base-Emitter On Voltage
-1000
-100
VCE = -1V
PULSE
Figure 2. Static Characteristic
-20
-16
I
B
=
-
80^µA
I_B^{= -}
70^µA
I_B^{= -}
60^µA
I _B ^{= - 50µA}
-12
I _B ^{= - 40µA}
-8
I_B ^{= - 30µA}
P
T
=
600mW
I_B = ^{- 20µA}
-4
I_B = - ^10µA
I_B = 0
-10
-20
-30
-40
-50
V_CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
IC = 10 IB
PULSE
-1
VCE(sat)
-0.1
VBE(sat)
-0.01
-0.1
-1
-10
-100
IC[mA], COLLECTOR CURRENT
-1000
Figure 6. Gain Bandwidth Product
1000
VCE = -5.0V
-10
100
-1
-0.1
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
VBE[V], BASE-EMITTER VOLTAGE
10
-1
-10
-100
IC[mA], COLLECTOR CURRENT
BC327A Rev. A
2
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