BC327A Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

BC327A
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CES
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-60
-5
-800
625
150
-55 ~ 150
Electrical Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
BV_CES
BV_EBO
I_CES
h_FE1
h_FE2
V_CE (sat)
V_BE (on)
f_T
C_ob
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
I_C= -10mA, I_B=0
I_C= -100µA, V_BE=0
I_E= -100µA, I_C=0
V_CE= -45V, V_BE=0
V_CE= -1V, I_C= -100mA
V_CE= -1V, I_C= -500mA
I_C= -500mA, I_B= -50mA
V_CE= -1V, I_C= -300mA
V_CE= -5V, I_C= -10mA, f=20MHz
V_CB= -10V, I_E=0, f=1MHz
Min.
-60
-60
-5
100
40
Typ.
100
12
Units
V
V
V
mA
mW
°C
°C
Max.
-100
400
Units
V
V
V
nA
-0.7
V
-1.2
V
MHz
pF
©2005 Fairchild Semiconductor Corporation
1
BC327A Rev. A
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