2N5962 Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
Collector-Emitter Breakdown Voltage* I_C = 5.0 mA, I_B = 0
45
V
V_(BR)CBO
Collector-Base Breakdown Voltage
I_C = 10 µA, I_E = 0
45
V
V_(BR)EBO
Emitter-Base Breakdown Voltage
I_E = 10 µA, I_C = 0
8.0
V
I_CBO
Collector Cutoff Current
I_EBO
Emitter Cutoff Current
V_CB = 30 V, I_E = 0
V_CB = 30 V, I_E = 0, T_A = 65 °C
V_EB = 5.0 V, I_C = 0
2.0
nA
50
nA
1.0
nA
ON CHARACTERISTICS*
h_FE
DC Current Gain
V_CE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
V_CE = 5.0 V, I_C = 10 µA
V_CE = 5.0 V, I_C = 100 µA
V_CE = 5.0 V, I_C = 1.0 mA
VCE = 5.0 V, IC = 10 mA
IC = 10 mA, IB = 0.5 mA
V_CE = 5.0 V, I_C = 1.0 mA
450
500
550
600
1400
0.2
V
0.5
0.7
V
SMALL SIGNAL CHARACTERISTICS
C_cb
Collector-Base Capacitance
C_eb
Emitter-Base Capacitance
hfe
Small-Signal Current Gain
NF
Noise Figure
V_CB = 5.0 V
4.0
pF
VEB = 0.5 V
6.0
pF
I_C = 10 mA, V_CE = 5.0 V,
f = 1.0 kHz
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
600
200
1.0
V_CE = 5.0 V, I_C = 10 µA,
R_S = 10 kΩ, f = 1.0 kHz,
B_W = 400 Hz
V_CE = 5.0 V, I_C = 100 µA,
R_S = 1.0 kΩ, f = 1.0 kHz,
B_W = 400 Hz
V_CE = 5.0 V, I_C = 100 µA,
R_S = 10 kΩ, f = 1.0 kHz,
B_W = 400 Hz
V_CE = 5.0 V, I_C = 100 µA,
RS = 100 kΩ, f = 1.0 kHz,
B_W = 400 Hz
VCE = 5.0 V, IC = 10 µA,
RS = 10 kΩ, f = 10 Hz -10 kHz
B_W = 15.7 kHz
3.0
dB
6.0
dB
4.0
dB
8.0
dB
3.0
dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%