2N5962 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Discrete POWER & Signal
Technologies
2N5962
MMBT5962
C
C
BE
TO-92
SOT-23
Mark: 117
E
B
NPN General Purpose Amplifier
This device is designed for use as low noise, high gain, general
purpose amplifiers requiring collector currents to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
45
VCBO
Collector-Base Voltage
45
V_EBO
Emitter-Base Voltage
8.0
I_C
T_J, T_stg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
100
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JC
Thermal Resistance, Junction to Case
Rθ_JA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
2N5962
625
5.0
83.3
200
*MMBT5962
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation