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| 2N5771_01 Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – PNP Switching Transistor | |||
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PNP Switching Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage* IC = 3.0 mA, IB = 0
15
V
V(BR)CES
Collector-Emitter Breakdown Voltage IC = 100 µA, VBE = 0
15
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100 µA, IE = 0
15
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100 µA, IC = 0
4.5
V
ICBO
Collector Cutoff Current
VCB = 8.0 V, IE = 0
10
nA
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE = 8.0 V, VBE = 0
VCE = 8.0 V, VBE = 0, TA= 125°C
VEB = 4.5 V, IC = 0
10
nA
5.0
µA
1.0
µA
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 1.0 mA, VCE = 0.5 V
35
IC = 10 mA, VCE = 0.3 V
50
120
IC = 10mA,VCE = 0.3V,TA = -55°C
20
IC = 50 mA, VCE = 1.0 V
40
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
0.15
V
0.18
V
IC = 50 mA, IB = 5.0 mA
0.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
0.8
V
0.75
0.95
V
IC = 50 mA, IB = 5.0 mA
1.5
V
SMALL SIGNAL CHARACTERISTICS
Ccb
Collector-Base Capacitance
Ceb
Emitter-Base Capacitance
hfe
Small-Signal Current Gain
VCB = 5.0 V, IE = 0,
f = 140 kHz
VBE = 0.5 V, IC = 0,
f = 140 kHz
IC = 10 mA, VCE = 10 V,
f = 100 MHz
3
3.0
pF
3.5
pF
8.5
MHz
SWITCHING CHARACTERISTICS
ts
Storage Time
ton
Turn-On Time
toff
Turn-Off Time
*Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2.0%
IC = 10 mA, VCC = 1.5 V,
IB1 = IB2 = 1.0 mA
IC = 10 mA, VCC = 1.5 V,
IB = 1.0 mA
IC = 10 mA, VCC = 1.5 V,
IB1 = IB2 = 1.0 mA
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
20
ns
15
ns
20
ns
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