2N5771_01 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – PNP Switching Transistor

2N5771
MMBT5771
C
C
BE
TO-92
SOT-23
Mark: 3R
E
B
PNP Switching Transistor
This device is designed for very high speed saturated switching
at collector currents to 100 mA. Sourced from Process 65. See
PN4258 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
V_CBO
Collector-Emitter Voltage
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
T_J, T_stg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
15
15
4.5
200
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
Thermal Resistance, Junction to Case
R_θJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
2N5771
350
2.8
125
357
*MMBT5771
225
1.8
556
Units
mW
mW /°C
°C/W
°C/W
 1997 Fairchild Semiconductor Corporation