2N5461_D26Z Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – P-Channel General Purpose Amplifier

P-Channel General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)GSS
IGSS
Gate-Source Breakdown Voltage
Gate Reverse Current
VGS(off)
Gate-Source Cutoff Voltage
VGS
Gate-Source Voltage
IG = 10 µA, VDS = 0
VGS = 20 V, VDS = 0
VGS = 20 V, VDS = 0, TA = 100°C
VDS = 15 V, ID = 1.0 µA 5460
5461
5462
VDS = 15 V, ID = 0.1 mA
VDS = 15 V, ID = 0.2 mA
VDS = 15 V, ID = 0.4 mA
5460
5461
5462
40
0.75
1.0
1.8
0.5
0.8
1.5
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0
5460
5461
5462
- 1.0
- 2.0
- 4.0
V
5.0 nA
1.0 µA
6.0
V
7.5
V
9.0
V
4.0
V
4.5
V
6.0
V
- 5.0 mA
- 9.0 mA
- 16 mA
SMALL SIGNAL CHARACTERISTICS
gfs
Forward Transfer Conductance
VDS = 15 V, VGS = 0, f = 1.0 kHz
5460 1000
4000 µmhos
5461 1500
5000 µ_mhos
5462 2000
6000 _µmhos
gos
Output Conductance
VDS = 15 V, VGS = 0, f = 1.0 kHz
75 µmhos
Ciss
Input Capacitance
VDS = 15 V, VGS = 0, f = 1.0 MHz
5.0 7.0 pF
Crss
Reverse Transfer Capacitance
VDS = 15 V, VGS = 0, f = 1.0 MHz
1.0 2.0 pF
NF
Noise Figure
VDS = 15 V, VGS = 0,
RG = 1.0 megohm, f = 100 Hz,
BW = 1.0 Hz
en
Equivalent Short-Circuit Input
VDS = 15 V, VGS = 0, f = 100 Hz,
Noise Voltage
BW = 1.0 Hz
1.0 2.5 dB
60
115 _nV/√Hz
5
*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%