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2N5461_D26Z Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel General Purpose Amplifier
2N5460
2N5461
2N5462
MMBF5460
MMBF5461
MMBF5462
G
SD
TO-92
G
SOT-23
Mark: 6E / 61U / 61V
S
D NOTE: Source & Drain
are interchangeable
P-Channel General Purpose Amplifier
This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources. Sourced
from Process 89.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
-
Symbol
Parameter
Value
VDG
VGS
IGF
TJ ,Tstg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
- 40
40
10
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
2N5460-5462
350
2.8
125
357
*MMBF5460-5462
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
2001 Fairchild Semiconductor Corporation
2N5460/5461/5462/MMBF5460/5461/5462, Rev A