2N5088BU Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
VCB = 20 V, IE = 0
VCB = 15 V, IE = 0
VEB = 3.0 V, IC = 0
VEB = 4.5 V, IC = 0
5088
5089
5088
5089
5088
5089
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 100 µA, VCE = 5.0 V
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V*
IC = 10 mA, IB = 1.0 mA
IC = 10 mA, VCE = 5.0 V
5088
5089
5088
5089
5088
5089
30
V
25
V
35
V
30
V
50
nA
50
nA
50
nA
100
nA
300
900
400
1200
350
450
300
400
0.5
V
0.8
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 500 µA,VCE = 5.0 mA,
50
MHz
f = 20 MHz
3
Ccb
Collector-Base Capacitance
VCB = 5.0 V, IE = 0, f = 100 kHz
4.0
pF
Ceb
Emitter-Base Capacitance
VBE = 0.5 V, IC = 0, f = 100 kHz
10
pF
hfe
Small-Signal Current Gain
IC = 1.0 mA, VCE = 5.0 V, 5088
f = 1.0 kHz
5089
350 1400
450 1800
NF
Noise Figure
IC = 100 µA, VCE = 5.0 V, 5088
RS = 10 kΩ,
5089
f = 10 Hz to 15.7 kHz
3.0
dB
2.0
dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2
Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p
Itf=.35 Vtf=4 Xtf=7 Rb=10)