2N5088BU Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

2N5088
2N5089
MMBT5088
MMBT5089
C
C
BE
TO-92
E
SOT-23
B
Mark: 1Q / 1R
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
V_CBO
V_EBO
I_C
T_J, T_stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
2N5088
2N5089
2N5088
2N5089
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
30
25
35
30
4.5
100
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JC
Thermal Resistance, Junction to Case
Rθ_JA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
2N5088
2N5089
625
5.0
83.3
200
*MMBT5088
*MMBT5089
350
2.8
357
Units
mW
mW /°C
°C/W
°C/W
 2001 Fairchild Semiconductor Corporation
2N5088/2N5089/MMBT5088/MMBT5089, Rev A