2N4125 Datasheet, PDF (2/2 Pages) Samsung semiconductor – PNP EPITAXIAL SILICON TRANSISTOR

PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
I_CBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
I_C = 1.0 mA, I_B = 0
I_C = 10 µA, I_E = 0
IE = 10 µA, IC = 0
V_CB = 20 V, I_E = 0
VEB = 3.0 V, IC = 0
ON CHARACTERISTICS*
h_FE
DC Current Gain
VCE(_sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V_CE = 1.0 V, I_C = 2.0 mA
VCE = 1.0 V, IC = 50 mA
IC = 50 mA, IB = 5.0 mA
IC = 50 mA, IB = 5.0 mA
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
C_ib
Input Capacitance
hfe
Small-Signal Current Gain
NF
Noise Figure
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
V_CB = 5.0 V, f = 100 kHz
VBE = 0.5 V, f = 100 kHz
IC = 2.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCE = 5.0 V, IC = 100 µA,
RS = 1.0 kΩ,
f = 10Hz to 15.7 kHz,
30
V
30
V
4.0
V
50
nA
50
nA
50
150
25
0.4
V
0.95
V
4.5
pF
10
pF
50
200
2.0
5.0
dB