2N4125 Datasheet, PDF (1/2 Pages) Samsung semiconductor – PNP EPITAXIAL SILICON TRANSISTOR

2N4125
Discrete POWER & Signal
Technologies
C
BE
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents of 10 µA to 100 mA.
Sourced from Process 66. See 3906 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
30
VCBO
Collector-Base Voltage
30
VEBO
Emitter-Base Voltage
4.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
Rθ_JA
Thermal Resistance, Junction to Ambient
Max
2N4125
625
5.0
83.3
200
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation