2N3906_01 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
V_(BR)CBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
V_(BR)EBO
I_BL
Emitter-Base Breakdown Voltage
Base Cutoff Current
I_CEX
Collector Cutoff Current
I_C = 1.0 mA, I_B = 0
I_C = 10 µA, I_E = 0
I_E = 10 µA, I_C = 0
V_CE = 30 V, V_BE = 3.0 V
V_CE = 30 V, V_BE = 3.0 V
40
V
40
V
5.0
V
50
nA
50
nA
ON CHARACTERISTICS
h_FE
V_CE(sat)
V_BE(sat)
DC Current Gain *
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I_C = 0.1 mA, V_CE = 1.0 V
I_C = 1.0 mA, V_CE = 1.0 V
I_C = 10 mA, V_CE = 1.0 V
I_C = 50 mA, V_CE = 1.0 V
I_C = 100 mA, V_CE = 1.0 V
I_C = 10 mA, I_B = 1.0 mA
I_C = 50 mA, I_B = 5.0 mA
I_C = 10 mA, I_B = 1.0 mA
I_C = 50 mA, I_B = 5.0 mA
60
80
100
60
30
0.65
SMALL SIGNAL CHARACTERISTICS
fT
C_obo
Cibo
NF
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
250
f = 100 MHz
Output Capacitance
V_CB = 5.0 V, I_E = 0,
f = 100 kHz
Input Capacitance
VEB = 0.5 V, IC = 0,
f = 100 kHz
Noise Figure
IC = 100 µA, VCE = 5.0 V,
RS =1.0kΩ,f=10 Hz to 15.7 kHz
SWITCHING CHARACTERISTICS
t_d
Delay Time
t_r
Rise Time
t_s
Storage Time
t_f
Fall Time
V_CC = 3.0 V, V_BE = 0.5 V,
I_C = 10 mA, I_B1 = 1.0 mA
V_CC = 3.0 V, I_C = 10mA
I_B1 = I_B2 = 1.0 mA
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
300
0.25
0.4
0.85
0.95
4.5
10.0
4.0
35
35
225
75
V
V
V
V
MHz
pF
pF
dB
ns
ns
ns
ns
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)